MJD122-1G 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi MJD122-1G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 1.75W
- Transition frequency (fT): 4MHz
- DC current gain (hFE@Vce,Ic): 1000@4V,4A
- Collector-emitter voltage (Vceo): 100V
- Collector cut-off current (Icbo@Vcb): 10uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@8A,80mA
- Package: TO-252
- Manufacturer: onsemi
